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Novel Indium Gallium Arsenide/aluminum Indium Arsenide/indium Phosphide Doped-Channel Heterojunction Field-Effect Transistors: Electron Transport and Transistor Performance.

J. Zahurak

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Key concepts: Gallium arsenide, Indium phosphide, Materials science, Optoelectronics, Indium, Heterojunction, Indium arsenide, Transistor

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Novel Indium Gallium Arsenide/aluminum Indium Arsenide/indium Phosphide Doped-Channel Heterojunction Field-Effect Transistors: Electron Transport and Transistor Performance. — Research Paper | ScholarLens