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Analysis of the Indium Gallium Arsenide/aluminum Gallium Arsenide Modulation-Doped Field Effect Transistor

Timothy Scott Henderson

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Key concepts: Gallium arsenide, Gallium, Materials science, Indium, Indium arsenide, Doping, Optoelectronics, Field-effect transistor

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Analysis of the Indium Gallium Arsenide/aluminum Gallium Arsenide Modulation-Doped Field Effect Transistor — Research Paper | ScholarLens