Hints of tunnel diode-like transport in a gated heterojunction

A model involving the classical theory of the tunnel diode has been built to describe the Negative Transconductance effect on T6/PDI-8CN2 gated heterojunction. Fits of the transfer curves presented in the original paper have been performed, and the dependence of the fitting parameters on heterojunction underlying thickness has been analyzed. The good agreement suggests that a more precise explanation of the charge transport in the devices relies on the formation of an accumulation P–N diode-like structure at the interface and on the emergence of the tunneling current for an interval of gate voltages dictated by the specific properties of the two semiconductors.