ScholarLens Back to search
2008•Applied Physics LettersRequires access

Resonant tunneling as a dominant transport mechanism in n-GaAs∕p-GaAs tunnel diodes

K. Jandieri, S. D. Baranovskiǐ, Oleg Rubel, W. Stolz, Florian Gebhard, W. Guter, Martin Hermle, Andreas W. Bett

Open publisher page 4 citations

Abstract

Current-voltage characteristics of Ga0.99In0.01As tunnel diodes are studied experimentally and theoretically. Three possible tunneling mechanisms are considered: direct band-to-band tunneling, phonon-assisted tunneling through defects, and resonant tunneling through defects. Comparison between theoretical results and experimental data reveals resonant tunneling through oxygen-related defects as the dominant transport mechanism at voltages corresponding to the peak current in diodes with doping level about 1019cm−3.

About this research paper

What this paper is about

Current-voltage characteristics of Ga0.99In0.01As tunnel diodes are studied experimentally and theoretically. Three possible tunneling mechanisms are considered: direct band-to-band tunneling, phonon-assisted tunneling through defects, and resonant tunneling through defects. Comparison between theoretical results and experimental data reveals resonant tunneling through oxygen-related defects as the dominant transport mechanism at voltages corresponding to the peak current in diodes with doping level about 1019cm−3.

Why it matters

OpenAlex reports 4 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Current-voltage characteristics of Ga0.99In0.01As tunnel diodes are studied experimentally and theoretically. Three possible tunneling mechanisms are considered: direct band-to-band tunneling, phonon-assisted tunneling through defects, and resonant tunneling through defects. Comparison between theoretical results and experimental data reveals resonant tunneling through oxygen-related defects as the dominant transport mechanism at voltages corresponding to the peak current in diodes with doping level about 1019cm−3.

Key concepts: Quantum tunnelling, Tunnel diode, Diode, Condensed matter physics, Doping, Materials science, Resonant-tunneling diode, Phonon

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Resonant tunneling as a dominant transport mechanism in n-GaAs∕p-GaAs tunnel diodes — Research Paper | ScholarLens