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1991•IEEE Transactions on Electron DevicesRequires access

Interband tunneling in heterostructure tunnel diodes

Rui Q. Yang, M. Sweeny, D. J. Day, J. M. Xu

Open publisher page 31 citations

Abstract

A particular type of tunnel diode, incorporating a wideband tunnel barrier, is studied. Simple analytic expressions are developed for estimating the tunneling coefficients to guide and optimize the design of heterostructure interband tunnel devices. The interband tunneling in such heterostructure tunnel diodes is modeled by a two-band Schrodinger equation. For a certain family of InGaAs/InA/GaAs p-n junction tunnel diodes, the interband transmission coefficients are calculated. The estimated peak currents are shown to compare very favorably with experimental results.>

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What this paper is about

A particular type of tunnel diode, incorporating a wideband tunnel barrier, is studied. Simple analytic expressions are developed for estimating the tunneling coefficients to guide and optimize the design of heterostructure interband tunnel devices. The interband tunneling in such heterostructure tunnel diodes is modeled by a two-band Schrodinger equation. For a certain family of InGaAs/InA/GaAs p-n junction tunnel diodes, the interband transmission coefficients are calculated. The estimated peak currents are shown to compare very favorably with experimental results.>

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Available abstract

A particular type of tunnel diode, incorporating a wideband tunnel barrier, is studied. Simple analytic expressions are developed for estimating the tunneling coefficients to guide and optimize the design of heterostructure interband tunnel devices. The interband tunneling in such heterostructure tunnel diodes is modeled by a two-band Schrodinger equation. For a certain family of InGaAs/InA/GaAs p-n junction tunnel diodes, the interband transmission coefficients are calculated. The estimated peak currents are shown to compare very favorably with experimental results.>

Key concepts: Quantum tunnelling, Diode, Tunnel diode, Heterojunction, Tunnel junction, Optoelectronics, Tunnel effect, Schrödinger equation

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