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Fabrication and Analysis of Current Transport in N P N and P N P Gallium-Arsenide - Arsenide Heterojunction Bipolar Transistors.

D.B. Lyon, Terence Joseph

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Key concepts: Gallium arsenide, Bipolar junction transistor, Optoelectronics, Materials science, Fabrication, Heterojunction, Heterostructure-emitter bipolar transistor, Arsenide

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Fabrication and Analysis of Current Transport in N P N and P N P Gallium-Arsenide - Arsenide Heterojunction Bipolar Transistors. — Research Paper | ScholarLens