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Characterization of Minority Carrier Transport and Heavy Doping Effects in N-SILICON/P-SILICON(1-X) Germanium(x)/n - Heterojunction Bipolar Transistors.

Tahir Ghani

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Key concepts: Germanium, Heterojunction, Silicon, Materials science, Doping, Optoelectronics, Bipolar junction transistor, Silicon-germanium

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Characterization of Minority Carrier Transport and Heavy Doping Effects in N-SILICON/P-SILICON(1-X) Germanium(x)/n - Heterojunction Bipolar Transistors. — Research Paper | ScholarLens