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P-N Heterojunction Bipolar Transistors in Aluminum Gallium Arsenide/indium Gallium Arsenide/gallium Arsenide.

D. Hill

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Key concepts: Gallium arsenide, Indium arsenide, Gallium, Materials science, Indium, Arsenide, Bipolar junction transistor, Optoelectronics

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P-N Heterojunction Bipolar Transistors in Aluminum Gallium Arsenide/indium Gallium Arsenide/gallium Arsenide. — Research Paper | ScholarLens