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1962•Journal of Applied PhysicsRequires access

Thermal Oxidation of Silicon

T. H. Yeh

Open publisher page 23 citations

Abstract

The results of a laboratory investigation of silicon—silicon dioxide film produced by high-temperature thermal oxidation of silicon in water vapor shows that (1) the oxidation rate in steam is dependent on the doping impurity concentration of the crystal, and (2) the oxidation in steam at 970°C for various lengths of time of phosphorus-diffused wafers with surface concentration of 2×1021 cm−3 results in an impurity pile-up region near the silicon surface. On the other hand, boron-diffused wafers with surface concentration in the order of 5×1018 cm−3 deplete their impurity concentration near the silicon surface.

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What this paper is about

The results of a laboratory investigation of silicon—silicon dioxide film produced by high-temperature thermal oxidation of silicon in water vapor shows that (1) the oxidation rate in steam is dependent on the doping impurity concentration of the crystal, and (2) the oxidation in steam at 970°C for various lengths of time of phosphorus-diffused wafers with surface concentration of 2×1021 cm−3 results in an impurity pile-up region near the silicon surface. On the other hand, boron-diffused wafers with surface concentration in the order of 5×1018 cm−3 deplete their impurity concentration near the silicon surface.

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Available abstract

The results of a laboratory investigation of silicon—silicon dioxide film produced by high-temperature thermal oxidation of silicon in water vapor shows that (1) the oxidation rate in steam is dependent on the doping impurity concentration of the crystal, and (2) the oxidation in steam at 970°C for various lengths of time of phosphorus-diffused wafers with surface concentration of 2×1021 cm−3 results in an impurity pile-up region near the silicon surface. On the other hand, boron-diffused wafers with surface concentration in the order of 5×1018 cm−3 deplete their impurity concentration near the silicon surface.

Key concepts: Silicon, Impurity, Thermal oxidation, Wafer, Materials science, Boron, LOCOS, Silicon dioxide

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