Development of Ion-Implanted Si-PIN Semiconductor Radiation Detector

The principle of Si-PIN semiconductor detector detecting charged particle,neutron and radiation are introduced systematically in this article.The design procedures and technology process of the detector whose sensitive area is Φ30 mm×420 μm are introduced.The key technologies which affect performance of the detector are also presented.The ion-implanted planar technology could reduce leakage current and enhance resolution of the detector as well as improves stability of the detector in high-temperature and vacuum environment.At last,I-V and C-V characteristics curves as well as detecting characteristic parameters are also introduced preliminarily.