Simulation and characterization of a dual-type 3-dimensional silicon detector
Jihoon Choi, Kyungmin Lee, Eunil Won
Abstract
Jihoon Choi, Kyungmin Lee, Eunil Won
Abstract
A three-dimensional (3D) silicon detector is an alternative semiconductor detector for high radiation environments. The 3D detector has several advantages such as radiation hardness so it can be used for a longer period of time in a high radiation environment without replacement. A dual-type 3D silicon detector is simulated, and the full depletion voltage, capacitance, response time and charge collection efficiency are measured.
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A three-dimensional (3D) silicon detector is an alternative semiconductor detector for high radiation environments. The 3D detector has several advantages such as radiation hardness so it can be used for a longer period of time in a high radiation environment without replacement. A dual-type 3D silicon detector is simulated, and the full depletion voltage, capacitance, response time and charge collection efficiency are measured.
Key concepts: Detector, Silicon, Radiation, Capacitance, Radiation hardening, Materials science, Optoelectronics, Semiconductor