TEMPERATURE PROPERTIES STUDY OF THE PLANAR PROCESS Si DETECTOR
Li D
Abstract
Li D
Abstract
The planar process Si detector is a kind of new type charged particles detector with fineproperties, it is possibly made X-ray detector suitable to the practical applications. In order to re-search into this possibility, detector temperature properties must be studied. In the paper experi-ment apparatus is introduced, temperature properties of the planar process Si detector are moresystematically measured, the temperature range is from -20℃ to +50℃. The results are pre-liminarily analyzed.
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The planar process Si detector is a kind of new type charged particles detector with fineproperties, it is possibly made X-ray detector suitable to the practical applications. In order to re-search into this possibility, detector temperature properties must be studied. In the paper experi-ment apparatus is introduced, temperature properties of the planar process Si detector are moresystematically measured, the temperature range is from -20℃ to +50℃. The results are pre-liminarily analyzed.
Key concepts: Detector, Planar, Materials science, Process (computing), Range (aeronautics), Optoelectronics, Atmospheric temperature range, Optics