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2019•Unpublished venueRequires access

Effects of Substrate Terminal on the Dynamic Resistance and the Midpoint Potential of High Voltage Cascode GaN HEMTs

Junfeng Wu, Yongsheng Zhu, GuangMin Deng, ShuFeng Zhao, Yi Pe

Open publisher page 2 citations

Abstract

In this paper, the performance of high voltage Cascode Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) in two different package types are compared. The only difference between the two package structures is the potential of the substrate terminal of the GaN HEMT which affects the dynamic on-resistance (Ron) and the stability of the midpoint potential of the Cascode GaN HEMT.

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What this paper is about

In this paper, the performance of high voltage Cascode Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) in two different package types are compared. The only difference between the two package structures is the potential of the substrate terminal of the GaN HEMT which affects the dynamic on-resistance (Ron) and the stability of the midpoint potential of the Cascode GaN HEMT.

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OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

In this paper, the performance of high voltage Cascode Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) in two different package types are compared. The only difference between the two package structures is the potential of the substrate terminal of the GaN HEMT which affects the dynamic on-resistance (Ron) and the stability of the midpoint potential of the Cascode GaN HEMT.

Key concepts: Cascode, High-electron-mobility transistor, Gallium nitride, Materials science, Substrate (aquarium), Optoelectronics, Wide-bandgap semiconductor, Terminal (telecommunication)

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Effects of Substrate Terminal on the Dynamic Resistance and the Midpoint Potential of High Voltage Cascode GaN HEMTs — Research Paper | ScholarLens