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1994•IEEE Microwave and Guided Wave LettersRequires access

A 100-GHz monolithic cascode InAlAs/InGaAs HEMT oscillator

Youngwoo Kwon, D. Pavlidis, P.F. Marsh, T. Brock, D.C. Streit

Open publisher page 10 citations

Abstract

The design, fabrication, and experimental characteristics of a 100-GHz monolithic cascode HEMT oscillator are presented. A cascode pair of InAlAs/InGaAs HEMT's has been used as the active cell to enhance the negative resistance so that more process tolerance can be achieved. The monolithic circuit oscillates around 100 GHz with an output power of 2 dBm at a drain bias voltage as small as 0.9 V. This is the first demonstration of cascode HEMT oscillators at W-band.>

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What this paper is about

The design, fabrication, and experimental characteristics of a 100-GHz monolithic cascode HEMT oscillator are presented. A cascode pair of InAlAs/InGaAs HEMT's has been used as the active cell to enhance the negative resistance so that more process tolerance can be achieved. The monolithic circuit oscillates around 100 GHz with an output power of 2 dBm at a drain bias voltage as small as 0.9 V. This is the first demonstration of cascode HEMT oscillators at W-band.>

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Available abstract

The design, fabrication, and experimental characteristics of a 100-GHz monolithic cascode HEMT oscillator are presented. A cascode pair of InAlAs/InGaAs HEMT's has been used as the active cell to enhance the negative resistance so that more process tolerance can be achieved. The monolithic circuit oscillates around 100 GHz with an output power of 2 dBm at a drain bias voltage as small as 0.9 V. This is the first demonstration of cascode HEMT oscillators at W-band.>

Key concepts: High-electron-mobility transistor, Cascode, Optoelectronics, Electrical engineering, Fabrication, Gallium arsenide, Materials science, Transistor

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