2016•Journal of SemiconductorsRequires access

Switching Characteristics of Resonant Tunneling Diodes

Shilin Zhang, Guo Weilian, Liang Huilai, Pingjuan Niu, Zhenkun Wang

Abstract

Using a P8510( C) network analyzer, the scattering parameter ( S22 ) Of AlAs/ InGaAs/AlAs resonant tunneling diodes (RTD) is measured. Equivalent circuit parameters are obtained by curve fit. The RTD switching time is estimated by Using the measured capacitance and aVerage negatiVe differential resistance. The minimum rise time of the sample is estimated to be 21ps.

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Key concepts: Quantum tunnelling, Diode, Resonant-tunneling diode, Capacitance, Materials science, Optoelectronics, Equivalent series resistance, Differential capacitance