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2006•天津大学学报：英文版Requires access

Switching Characteristics and Analysis of Resonant Tunneling Diodes

Shilin Zhang

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Abstract

Resonant tunneling diode ( RTD ) of AlAs/lnGaAs/AIAs double barrier-single well structure was designed and fabricated. The devices showed current-voltage characteristics with peak-valley current ratio of 4 : I at room temperature. The scattering parameter of RTD was measured by using an HPS510(C) network analyzer. Equivalent circuit parameters were obtained by curve fitting and optimized. The RTD switching time was estimated using the measured capacitance and average negative differential resistance. The minimum rise time of the sample was estimated to be 21 ps.

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What this paper is about

Resonant tunneling diode ( RTD ) of AlAs/lnGaAs/AIAs double barrier-single well structure was designed and fabricated. The devices showed current-voltage characteristics with peak-valley current ratio of 4 : I at room temperature. The scattering parameter of RTD was measured by using an HPS510(C) network analyzer. Equivalent circuit parameters were obtained by curve fitting and optimized. The RTD switching time was estimated using the measured capacitance and average negative differential resistance. The minimum rise time of the sample was estimated to be 21 ps.

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Available abstract

Resonant tunneling diode ( RTD ) of AlAs/lnGaAs/AIAs double barrier-single well structure was designed and fabricated. The devices showed current-voltage characteristics with peak-valley current ratio of 4 : I at room temperature. The scattering parameter of RTD was measured by using an HPS510(C) network analyzer. Equivalent circuit parameters were obtained by curve fitting and optimized. The RTD switching time was estimated using the measured capacitance and average negative differential resistance. The minimum rise time of the sample was estimated to be 21 ps.

Key concepts: Resonant-tunneling diode, Quantum tunnelling, Diode, Capacitance, Materials science, Optoelectronics, Current (fluid), Network analyzer (electrical)

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