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2006•Chinese Physics LettersRequires access

A Small Signal Equivalent Circuit Model for Resonant Tunnelling Diode

Long Ma, Huang Ying-Long, Yang Zhang, Wang Liangchen, Yang Fu-Hua, Yiping Zeng

Open publisher page 5 citations

Abstract

We report a resonant tunnelling diode (RTD) small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In 0.53 Ga 0.47 As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current–voltage ( I–V ) characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunnelling process, is also calculated to be 2.09 ps.

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What this paper is about

We report a resonant tunnelling diode (RTD) small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In 0.53 Ga 0.47 As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current–voltage ( I–V ) characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunnelling process, is also calculated to be 2.09 ps.

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OpenAlex reports 5 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

We report a resonant tunnelling diode (RTD) small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In 0.53 Ga 0.47 As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current–voltage ( I–V ) characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunnelling process, is also calculated to be 2.09 ps.

Key concepts: Quantum tunnelling, Resonant-tunneling diode, Equivalent circuit, Capacitance, SIGNAL (programming language), Diode, Inductance, Optoelectronics

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