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2019•Unpublished venueRequires access

Characterization and Modeling of the Transient Safe Operating Area in LDMOS Transistors

Hang Li, Kalpathy B. Sundaram, Yuanzhong Paul Zhou, Javier A. Salcedo, Jean-Jacques Hajjar

Open publisher page 5 citations

Abstract

The boundaries that determine the LDMOS transient safe operating area are presented. It includes the time-independent electrical SOA (eSOA) and short-pulse transient SOA post device snapback. A compact modeling methodology is introduced for high voltage LDMOS with minimal circuit simulation convergence shortcomings. By adding a failure monitor, the model proposed can be used to determine both the boundaries of eSOA and short-pulse transient SOA.

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What this paper is about

The boundaries that determine the LDMOS transient safe operating area are presented. It includes the time-independent electrical SOA (eSOA) and short-pulse transient SOA post device snapback. A compact modeling methodology is introduced for high voltage LDMOS with minimal circuit simulation convergence shortcomings. By adding a failure monitor, the model proposed can be used to determine both the boundaries of eSOA and short-pulse transient SOA.

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OpenAlex reports 5 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

The boundaries that determine the LDMOS transient safe operating area are presented. It includes the time-independent electrical SOA (eSOA) and short-pulse transient SOA post device snapback. A compact modeling methodology is introduced for high voltage LDMOS with minimal circuit simulation convergence shortcomings. By adding a failure monitor, the model proposed can be used to determine both the boundaries of eSOA and short-pulse transient SOA.

Key concepts: LDMOS, Snapback, Safe operating area, Transient (computer programming), Electrostatic discharge, Electronic engineering, Voltage, Transistor

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