A.W. Ludikhuize, Michiel Slotboom, A. Nezar, N. Nowlin, Reinhard Brock
Abstract
Hot-carrier-induced problems for 50 V ENMOS and LDMOS devices implemented in a 0.8 /spl mu/m CMOS process have been analyzed by monitoring the backgate current and by using 2D high-voltage on-state device simulations.
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Hot-carrier-induced problems for 50 V ENMOS and LDMOS devices implemented in a 0.8 /spl mu/m CMOS process have been analyzed by monitoring the backgate current and by using 2D high-voltage on-state device simulations.
Key concepts: Snapback, LDMOS, Materials science, Transistor, Optoelectronics, CMOS, Electrostatic discharge, Degradation (telecommunications)