2018•Unpublished venueRequires access

Comparative Study on the Total Ionizing Dose Effects of the Superjunction and the Conventional Power MOSFETs

Min Ren, Wenjing He, Wei Gao, Shao-Feng Cai, Zehong Li, Jinping Zhang, Bo Zhang

Abstract

The effects of Total Ionizing Dose (TID) radiation on the cells and terminations of Superjunction MOSFET (SJ-MOS) and conventional power MOSFET (C-MOS) were studied by simulations, respectively. The same degradation trends in electrical parameters were found for the cells of these two devices; however, the breakdown voltage (BV) of the termination region in SJ-MOS shows much less sensitivity to TID radiation. The reason why SJ-MOS has a superior TID endurance is discussed in detail.

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Key concepts: Absorbed dose, Ionizing radiation, MOSFET, Power MOSFET, Optoelectronics, Materials science, Radiation, Sensitivity (control systems)