2010•DOAJ (DOAJ: Directory of Open Access Journals)Open access

Sensors of absorbed dose of ionizing radiation based on mosfet

V. L. Perevertaylo

Abstract

The requirements to technology and design of p-channel and n-channel MOS transistors with a thick oxide layer designed for use in the capacity of integral dosimeters of absorbed dose of ionizing radiation are defined. The technology of radiation-sensitive MOS transistors with a thick oxide in the p-channel and n-channel version is created.

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Available abstract

Key concepts: Ionizing radiation, Absorbed dose, Radiation, MOSFET, Environmental science, Materials science, Radiochemistry, Nuclear engineering