Wen-Bin Yeh, Y. K. Su, Kung‐Yen Lee, Chia‐Hui Cheng, Chih‐Fang Huang
Abstract
In this paper, a novel structure for a vertical power MOSFET is designed to have higher breakdown voltage and lower specific on-state resistance compared with a conventional vertical power MOSFET.
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In this paper, a novel structure for a vertical power MOSFET is designed to have higher breakdown voltage and lower specific on-state resistance compared with a conventional vertical power MOSFET.
Key concepts: MOSFET, Power MOSFET, Breakdown voltage, Electrical engineering, Power semiconductor device, Power (physics), Voltage, Materials science