2018•Materials science forumOpen access

Short-Circuit Capability of SiC Cascode

Xueqing Li, Anup Bhalla, Peter Alexandrov

Abstract

This work investigates the short-circuit capability of SiC cascode by performing two-dimensional electro-thermal TCAD simulations. The effects of the threshold voltage of the SiC JFET on the cascode short-circuit withstand time are studied. A design trade-off between the JFET specific-on resistance and the cascode short-circuit withstand time is determined. The experimental results are also presented.

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Available abstract

Key concepts: JFET, Cascode, Materials science, Optoelectronics, Voltage, Electronic engineering, Electrical engineering, Field-effect transistor