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2017•Unpublished venueRequires access

Parameters estimation of SPICE models for silicon carbide devices

Damian Bisewski

Open publisher page 4 citations

Abstract

The paper deals with the problem of parameters estimation of built-in in SPICE models of semiconductor devices. A new parameters estimation procedure based on the genetic algorithm is proposed and discussed. The usefulness and accuracy of presented procedure are illustrated by means of the results of measurements and SPICE models simulations for selected semiconductor devices made of silicon carbide.

About this research paper

What this paper is about

The paper deals with the problem of parameters estimation of built-in in SPICE models of semiconductor devices. A new parameters estimation procedure based on the genetic algorithm is proposed and discussed. The usefulness and accuracy of presented procedure are illustrated by means of the results of measurements and SPICE models simulations for selected semiconductor devices made of silicon carbide.

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OpenAlex reports 4 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

The paper deals with the problem of parameters estimation of built-in in SPICE models of semiconductor devices. A new parameters estimation procedure based on the genetic algorithm is proposed and discussed. The usefulness and accuracy of presented procedure are illustrated by means of the results of measurements and SPICE models simulations for selected semiconductor devices made of silicon carbide.

Key concepts: Spice, Silicon carbide, Semiconductor device modeling, Computer science, Semiconductor device, Electronic engineering, Estimation theory, Silicon

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