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Modeling SiC MPS diodes

J. Zarębski, Krzysztof Górecki, J. Dąbrowski

Open publisher page 3 citations

Abstract

This paper concerns the problem of SPICE modeling of the class of silicon-carbide MPS diodes with thermal effects (self-heating) taken into account. In the paper the SPICE electrothermal model by Infineon Technologies of SiC MPS diodes is considered and described in detail. The model is verified experimentally by comparing the calculated and measured device characteristics. The simple modification of the model causing the improvement of its accuracy is proposed. The diode IDT06S60C is chosen for investigation.

About this research paper

What this paper is about

This paper concerns the problem of SPICE modeling of the class of silicon-carbide MPS diodes with thermal effects (self-heating) taken into account. In the paper the SPICE electrothermal model by Infineon Technologies of SiC MPS diodes is considered and described in detail. The model is verified experimentally by comparing the calculated and measured device characteristics. The simple modification of the model causing the improvement of its accuracy is proposed. The diode IDT06S60C is chosen for investigation.

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Available abstract

This paper concerns the problem of SPICE modeling of the class of silicon-carbide MPS diodes with thermal effects (self-heating) taken into account. In the paper the SPICE electrothermal model by Infineon Technologies of SiC MPS diodes is considered and described in detail. The model is verified experimentally by comparing the calculated and measured device characteristics. The simple modification of the model causing the improvement of its accuracy is proposed. The diode IDT06S60C is chosen for investigation.

Key concepts: Spice, Silicon carbide, Diode, Materials science, Simple (philosophy), Thermal, Optoelectronics, Semiconductor device modeling

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