Numerical Simulation of Polysilicon Solid-liquid Interface Transmogrification in Heat Transfer Process

The shape of solid-liquid interface during the directional solidification process, which is difficult to be observed and measured in actual processes, controls the grain orientation and grain size of polysilicon ingot. We carried out numerical calculations of the directional solidification progress of polycrystalline silicon and invested the means to deal with the latent heat of solidification in numerical simulation. The distributions of the temperature field of the melt for the crystallization progress as well as the transformation of the solid-liquid interface were obtained. The simulation results are consistent with the experimental outcomes. The results show that the curvature of solid-liquid interface is small and stability, larger grain sized columnar crystal can be grown in the laboratory-scale furnace at a solidification rate of 10 μm•s -1 . It shall provide important theoretical basis for metallurgical process and polysilicon production technology.