2018•Journal of Crystal GrowthRequires access

Concept and method to create a distinct low-temperature region in a Si melt for growth of a Si single ingot with a large diameter ratio using the noncontact crucible method

Kazuo Nakajima, Satoshi Ono, Harumasa Itoh

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Key concepts: Crucible (geodemography), Ingot, Micro-pulling-down, Materials science, Crystal growth, Flow (mathematics), Metallurgy, Silicon

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Concept and method to create a distinct low-temperature region in a Si melt for growth of a Si single ingot with a large diameter ratio using the noncontact crucible method — Research Paper | ScholarLens