2017•Extended Abstracts of the 2017 International Conference on Solid State Devices and MaterialsRequires access
Cross Point Type 1T-1MTJ STT-MRAM Cell with 60 nm Multi-pillar Vertical Body Channel MOSFET under 55 nm p-MTJ and Its Beyond for High Density STT-MRAM
Takayoshi Sasaki, T. Endoh
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Abstract
2017 International Conference on Solid State Devices and Materials,Cross Point Type 1T-1MTJ STT-MRAM Cell with 60 nm Multi-pillar Vertical Body Channel MOSFET under 55 nm p-MTJ and Its Beyond for High Density STT-MRAM