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2006•IBM Journal of Research and DevelopmentRequires access

Design considerations for MRAM

T. Maffitt, J. DeBrosse, John Gabric, E. Gow, M. Lamorey, J. S. Parenteau, D. Willmott, Mark A. Wood, W. J. Gallagher

Open publisher page 85 citations

Abstract

MRAM (magnetic random access memory) technology, based on the use of magnetic tunnel junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance. This paper is an overview of MRAM design considerations. Topics covered include MRAM fundamentals, array architecture, several associated design studies, and scaling challenges. In addition, a 16-Mb MRAM demonstration vehicle is described, and performance results are presented.

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What this paper is about

MRAM (magnetic random access memory) technology, based on the use of magnetic tunnel junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance. This paper is an overview of MRAM design considerations. Topics covered include MRAM fundamentals, array architecture, several associated design studies, and scaling challenges. In addition, a 16-Mb MRAM demonstration vehicle is described, and performance results are presented.

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OpenAlex reports 85 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

MRAM (magnetic random access memory) technology, based on the use of magnetic tunnel junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance. This paper is an overview of MRAM design considerations. Topics covered include MRAM fundamentals, array architecture, several associated design studies, and scaling challenges. In addition, a 16-Mb MRAM demonstration vehicle is described, and performance results are presented.

Key concepts: Magnetoresistive random-access memory, Non-volatile memory, Computer science, Racetrack memory, Scaling, Tunnel magnetoresistance, Universal memory, Magnetic storage

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