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2007•Unpublished venueRequires access

Toggle MRAM: A highly-reliable Non-Volatile Memory

Mark Durlam, Brad Craigo, Mark DeHerrera, B. N. Engel, Gregory W. Grynkewich, Baoxin Huang, Jason Janesky, Marie‐Blandine Martin, Bruno Luigi Martino, J. Salter, Jon M. Slaughter, L. Wise, S. Tehrani

Open publisher page 22 citations

Abstract

Magnetoresistive Random Access Memory (MRAM) is based on magnetic tunnel junction devices integrated with standard CMOS, resulting in high-speed read and write, unlimited endurance, and the highest reliability of any non-volatile memory. The first commercially available MRAM product, Freescale's 4Mb MR2A16A Toggle MRAM, was released for production in 2006 and is now in volume production. In this paper we provide an overview of Freescale's MRAM technology and describe the performance and reliability attributes of the MR2A16A.

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What this paper is about

Magnetoresistive Random Access Memory (MRAM) is based on magnetic tunnel junction devices integrated with standard CMOS, resulting in high-speed read and write, unlimited endurance, and the highest reliability of any non-volatile memory. The first commercially available MRAM product, Freescale's 4Mb MR2A16A Toggle MRAM, was released for production in 2006 and is now in volume production. In this paper we provide an overview of Freescale's MRAM technology and describe the performance and reliability attributes of the MR2A16A.

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Available abstract

Magnetoresistive Random Access Memory (MRAM) is based on magnetic tunnel junction devices integrated with standard CMOS, resulting in high-speed read and write, unlimited endurance, and the highest reliability of any non-volatile memory. The first commercially available MRAM product, Freescale's 4Mb MR2A16A Toggle MRAM, was released for production in 2006 and is now in volume production. In this paper we provide an overview of Freescale's MRAM technology and describe the performance and reliability attributes of the MR2A16A.

Key concepts: Magnetoresistive random-access memory, Reliability (semiconductor), Non-volatile memory, Computer science, CMOS, Tunnel magnetoresistance, Random access memory, Electrical engineering

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