G114 Investigation of Device Interaction Phenomena in Si CMOS

Nowadays, CMOS devices are widely used in LSIs. For higher degree of integration of semiconductor devices, the distance between nMOS and pMOS in CMOS must be decreased. However, in bulk CMOS, nMOS and pMOS are not completely insulated. Therefore, decrease of the distance between nMOS and pMOS in bulk CMOS leads to the interaction between two MOSFETs. To decrease the distance between two MOSFETs in bulk CMOS, the interaction phenomena between nMOS and pMOS in bulk CMOS should be investigated. In this research, we report our experimental work of CMOS inverter. We fabricated CMOS inverters, in which the distance between two MOSFET is changed. We measured the drain current under several voltage conditions. The experimental results show, in the case that the distance between two MOSFET in bulk CMOS is decreased, the current of each MOSFET is dependent only on drain voltage and we cannot control the current by the gate voltage.