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2023•IEEE Electron Device LettersRequires access

Higher NMOS Single Event Transient Susceptibility Compared to PMOS in Sub-20nm Bulk FinFET

Qian Sun, Yang Guo, Bin Liang, Ming Tao, Yaqing Chi, Pengcheng Huang, Zhenyu Wu, Deng Luo, Jianjun Chen

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Abstract

The single event transient (SET) susceptibility in the sub-20nm bulk FinFET process is studied in this letter. It is firstly found that NMOS is more sensitive to SET compared with PMOS, which is opposite to the planar CMOS process. A FinFET Technology Computer-Aid Design (TCAD) model is established to research the underlying physical mechanisms. Results show that two factors lead to the difference in SET susceptibility between NMOS and PMOS. First, the drift & diffusion (DD) plays more role than bipolar amplification (BA) in FinFET-PMOS, causing lower SET sensitivity than planar-PMOS. Second, source and drain (S/D) collect more charge in NMOS, causing more sensitivity of SET compared to PMOS.

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What this paper is about

The single event transient (SET) susceptibility in the sub-20nm bulk FinFET process is studied in this letter. It is firstly found that NMOS is more sensitive to SET compared with PMOS, which is opposite to the planar CMOS process. A FinFET Technology Computer-Aid Design (TCAD) model is established to research the underlying physical mechanisms. Results show that two factors lead to the difference in SET susceptibility between NMOS and PMOS. First, the drift & diffusion (DD) plays more role than bipolar amplification (BA) in FinFET-PMOS, causing lower SET sensitivity than planar-PMOS. Second, source and drain (S/D) collect more charge in NMOS, causing more sensitivity of SET compared to PMOS.

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Available abstract

The single event transient (SET) susceptibility in the sub-20nm bulk FinFET process is studied in this letter. It is firstly found that NMOS is more sensitive to SET compared with PMOS, which is opposite to the planar CMOS process. A FinFET Technology Computer-Aid Design (TCAD) model is established to research the underlying physical mechanisms. Results show that two factors lead to the difference in SET susceptibility between NMOS and PMOS. First, the drift & diffusion (DD) plays more role than bipolar amplification (BA) in FinFET-PMOS, causing lower SET sensitivity than planar-PMOS. Second, source and drain (S/D) collect more charge in NMOS, causing more sensitivity of SET compared to PMOS.

Key concepts: NMOS logic, PMOS logic, MOSFET, Transient (computer programming), CMOS, Sensitivity (control systems), Materials science, Optoelectronics

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