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2016•Unpublished venueRequires access

An analytical gate tunneling current model of Re-S/D SOI MOSFETs

Pramod Kumar Tiwari, Arun Kumar, Dipankar Talukdar

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Abstract

This paper presents an analytical direct gate tunneling current model of recessed-source/drain(Re-S/D) SOI MOSFET. The gate tunneling current behavior has been analyzed by varying different parameters like gate insulator thickness and drain to source voltage. The gate tunneling current has been investigated with the effect of high-k dielectric constant. 2D ATLAS tool has been used to validate the model results.

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What this paper is about

This paper presents an analytical direct gate tunneling current model of recessed-source/drain(Re-S/D) SOI MOSFET. The gate tunneling current behavior has been analyzed by varying different parameters like gate insulator thickness and drain to source voltage. The gate tunneling current has been investigated with the effect of high-k dielectric constant. 2D ATLAS tool has been used to validate the model results.

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Available abstract

This paper presents an analytical direct gate tunneling current model of recessed-source/drain(Re-S/D) SOI MOSFET. The gate tunneling current behavior has been analyzed by varying different parameters like gate insulator thickness and drain to source voltage. The gate tunneling current has been investigated with the effect of high-k dielectric constant. 2D ATLAS tool has been used to validate the model results.

Key concepts: Quantum tunnelling, Silicon on insulator, MOSFET, Optoelectronics, Gate voltage, Dielectric, Gate dielectric, Time-dependent gate oxide breakdown

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