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2003•Microelectronic EngineeringRequires access

Reliability characteristics of high-K gate dielectrics HfO2 in metal-oxide semiconductor capacitors

Dedong Han, Jinfeng Kang, Changhai Lin, Ruqi Han

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Key concepts: Time-dependent gate oxide breakdown, High-κ dielectric, Materials science, Dielectric, Gate dielectric, Capacitor, SILC, Metal gate

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