1999•Electronics LettersRequires access

Effect of interdiffusion on dark current responseof GaInP/GaAs quantum well infrared photodetectors

Joseph Micallef, Alison Brincat

Abstract

The dark current response of interdiffused GaInP/GaAs quantum well intersubband infrared photodetectors is theoretically analysed for the case of group-III-only interdiffusion. The abrupt carrier confinement profile that is maintained after interdiffusion exhibits an increase in barrier height, and a significant reduction in the dark current of the interdiffused photodetector can be achieved.

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Available abstract

Key concepts: Photodetector, Dark current, Optoelectronics, Infrared, Materials science, Quantum well, Current (fluid), Gallium arsenide