TCAD analysis of nanoscale AlGaN/GaN HEMT for application in terahertz regime

In this paper we propose a simulation model of 18 nm AlGaN/GaN high electron mobility transistor capable of operating at high voltages and in terahertz regime. The HEMT structure has been designed on a sapphire substrate and two GaN layers and three AlGaN layers have been used. Silicon Nitride has been used for passivation. Electrical characteristics if the device had been obtained for a wide range of gate and drain voltages. The device characteristics, transconductance and drain conductance along with energy band diagram of the proposed structure has been obtained. A high cutoff frequency of 0.1 THz is obtained which proves its application in terahertz regime.