Modeling of Sheet Carrier Density, DC and Transconductance of Novel InxAl1-XN/GaN-Based HEMT Structures

In this paper, we propose a physics-based analytical model of novel InAlN/GaN High Electron Mobility Transistor (HEMT) by considering the quasi-triangular quantum well with minimal empirical parameters. The derived model is compared for different short and long gate length devices. The results are calibrated and verified with experimental data over a full range for gate and drain applied voltages. Significant improvement in ns, drain Current, and transconductance are observed for InAlN HEMT making it suitable for nanoscale and microwave analysis in circuit design. Therefore, the proposed model can deal directly with device/physical parameters, and it can be expressed by a very small number of model parameters.