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2011•Applied Mechanics and MaterialsOpen access

An Analytical Model for the Subthreshold Current of Fully Depleted Strained-SOI MOSFET

Shan Shan Qin, He Ming Zhang, Hui Yong Hu, Xiao Bo Xu, Xiaoyan Wang

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Abstract

A subthreshold current model for fully depleted strained Si on insulator (FD SSOI) MOSFET is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification is carried out using device simulator ISE. Good agreement is obtained between the model’s calculations and the simulated results. This subthreshold current model provides valuable reference to the FD-SSOI MOSFET design.

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What this paper is about

A subthreshold current model for fully depleted strained Si on insulator (FD SSOI) MOSFET is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification is carried out using device simulator ISE. Good agreement is obtained between the model’s calculations and the simulated results. This subthreshold current model provides valuable reference to the FD-SSOI MOSFET design.

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Available abstract

A subthreshold current model for fully depleted strained Si on insulator (FD SSOI) MOSFET is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification is carried out using device simulator ISE. Good agreement is obtained between the model’s calculations and the simulated results. This subthreshold current model provides valuable reference to the FD-SSOI MOSFET design.

Key concepts: Subthreshold conduction, MOSFET, Subthreshold slope, Silicon on insulator, Poisson's equation, Current (fluid), Electronic engineering, Materials science

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