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Spice simulation of 0.18 μm CMOS ring oscillators using physical models for capacitance and series resistance

S. Biesemans, S. Kubicek, K. De Meyer

Open publisher page 2 citations

Abstract

We present a case study in which ring oscillators, with 0.18 /spl mu/m channel length, are measured and compared with Spice simulations. It is found that good quantitative results can be obtained for several process splits. Special care is taken to include a physical model for the parasitic series resistance R/sub s/(V/sub gs/) and to model correctly the parasitic capacitances obtained from the mask layout.

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What this paper is about

We present a case study in which ring oscillators, with 0.18 /spl mu/m channel length, are measured and compared with Spice simulations. It is found that good quantitative results can be obtained for several process splits. Special care is taken to include a physical model for the parasitic series resistance R/sub s/(V/sub gs/) and to model correctly the parasitic capacitances obtained from the mask layout.

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OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

We present a case study in which ring oscillators, with 0.18 /spl mu/m channel length, are measured and compared with Spice simulations. It is found that good quantitative results can be obtained for several process splits. Special care is taken to include a physical model for the parasitic series resistance R/sub s/(V/sub gs/) and to model correctly the parasitic capacitances obtained from the mask layout.

Key concepts: Spice, Equivalent series resistance, Ring oscillator, Capacitance, Series (stratigraphy), Ring (chemistry), CMOS, Parasitic capacitance

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