From quasi-static to transient system level ESD simulation: Extraction of turn-on elements
Fabien Escudié, Fabrice Caignet, Nicolas Nolhier, Marise Bafleur
Abstract
Fabien Escudié, Fabrice Caignet, Nicolas Nolhier, Marise Bafleur
Abstract
Transient simulation is a main challenge to achieve system level ESD failure prediction. During the turn-on of the protections, complex phenomena introduce complex transient behaviors. In this paper we investigate the parameters that have to be added to perform accurate transient simulations and we propose a methodology to extract them by measurements.
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Transient simulation is a main challenge to achieve system level ESD failure prediction. During the turn-on of the protections, complex phenomena introduce complex transient behaviors. In this paper we investigate the parameters that have to be added to perform accurate transient simulations and we propose a methodology to extract them by measurements.
Key concepts: Transient (computer programming), Transient analysis, Electrostatic discharge, Computer science, Turn (biochemistry), Transient response, Engineering, Electrical engineering