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Transient analysis of memristors

Anas Mazady, Mehdi Anwar

Open publisher page 6 citations

Abstract

Development of resistance-switching random access memory (RRAM) employing memristors would be greatly facilitated once their transient behavior is properly understood. In this paper, we report transient behavior of memristors. The analysis is based on the dynamical characteristics derived analytically. A transient circuit model is also developed and simulated in cadence using HSPICE simulator.

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What this paper is about

Development of resistance-switching random access memory (RRAM) employing memristors would be greatly facilitated once their transient behavior is properly understood. In this paper, we report transient behavior of memristors. The analysis is based on the dynamical characteristics derived analytically. A transient circuit model is also developed and simulated in cadence using HSPICE simulator.

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OpenAlex reports 6 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Development of resistance-switching random access memory (RRAM) employing memristors would be greatly facilitated once their transient behavior is properly understood. In this paper, we report transient behavior of memristors. The analysis is based on the dynamical characteristics derived analytically. A transient circuit model is also developed and simulated in cadence using HSPICE simulator.

Key concepts: Memristor, Transient (computer programming), Transient analysis, Resistive random-access memory, Cadence, Computer science, Spice, Transient response

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