ArF photoresist etching behavior evaluation

The transition of photoresist from KrF photoresist to ArF photoresist poses new challenges for etching process, especially for dielectric etching. In this article we design two types of dielectric etching applications, hole (contact) etching and LS (line space) etching. SAS software is employed for DOE (deisgn of experiment) analysis of hole etching process optimization, best condition is derived and confirmed by experiment. To address LER, which is a persistent issue in LS application, mechanism is proposed and LER is successfully solved by new process.