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A novel NVRAM cell technology for high density applications

Y. Yasmauchi, Kenichi Tanaka, K. Sakiyama

Open publisher page 4 citations

Abstract

A novel nonvolatile random-access memory (NVRAM) cell is proposed for high-density applications. This cell combines dynamic RAM performance with the nonvolatility of an EEPROM (electrically erasable programmable read-only memory) and permits the simultaneous transfer of all dynamic RAM data on the chip to the EEPROM. The data transfer is completed in less than 10 ms. The single-cell endurance exceeds 10/sup 5/ store cycles. A cell 79- mu m/sup 2/ in size is realized using 1.2- mu m process technology. The charge retention characteristic is favorable for 256-kb dynamic RAM operation.>

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What this paper is about

A novel nonvolatile random-access memory (NVRAM) cell is proposed for high-density applications. This cell combines dynamic RAM performance with the nonvolatility of an EEPROM (electrically erasable programmable read-only memory) and permits the simultaneous transfer of all dynamic RAM data on the chip to the EEPROM. The data transfer is completed in less than 10 ms. The single-cell endurance exceeds 10/sup 5/ store cycles. A cell 79- mu m/sup 2/ in size is realized using 1.2- mu m process technology. The charge retention characteristic is favorable for 256-kb dynamic RAM operation.>

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OpenAlex reports 4 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

A novel nonvolatile random-access memory (NVRAM) cell is proposed for high-density applications. This cell combines dynamic RAM performance with the nonvolatility of an EEPROM (electrically erasable programmable read-only memory) and permits the simultaneous transfer of all dynamic RAM data on the chip to the EEPROM. The data transfer is completed in less than 10 ms. The single-cell endurance exceeds 10/sup 5/ store cycles. A cell 79- mu m/sup 2/ in size is realized using 1.2- mu m process technology. The charge retention characteristic is favorable for 256-kb dynamic RAM operation.>

Key concepts: EEPROM, Non-volatile random-access memory, Non-volatile memory, EPROM, Computer science, Data retention, Chip, Computer hardware

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