Yasushi Terada, Kaiuo Kobayashi, Takeshi Nakayama, Hideaki Arima, Tsutomu Yoshihara
Abstract
High density EEPROMs beyond 04 K have already been introduced into the market. These EEPROMs' application, however, is limited because of lack of erase/write endurance and a long programming time. High density NVRAM which combines a RAM ceil bit-by-bit with EEPROM cell is desired.
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High density EEPROMs beyond 04 K have already been introduced into the market. These EEPROMs' application, however, is limited because of lack of erase/write endurance and a long programming time. High density NVRAM which combines a RAM ceil bit-by-bit with EEPROM cell is desired.
Key concepts: EEPROM, Non-volatile random-access memory, EPROM, Non-volatile memory, Computer science, Embedded system, Random access memory, Computer hardware