2015Journal of Physics Conference SeriesOpen access

Mathematical modeling of piezoresistive elements

Matias Geremias, Rodrigo César Silva Moreira, Luiz Antônio Rasia, Alberto Moi

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Abstract

This article presents the longitudinal piezoresistive coefficients for thin film amorphous semiconductor type a-C:H. Experimental data and mathematical models have been used in computer simulations. The results show that a reduction of the longitudinal piezoresistive coefficient occurs due to the increased concentration of impurities in the films analyzed.

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What this paper is about

This article presents the longitudinal piezoresistive coefficients for thin film amorphous semiconductor type a-C:H. Experimental data and mathematical models have been used in computer simulations. The results show that a reduction of the longitudinal piezoresistive coefficient occurs due to the increased concentration of impurities in the films analyzed.

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Available abstract

This article presents the longitudinal piezoresistive coefficients for thin film amorphous semiconductor type a-C:H. Experimental data and mathematical models have been used in computer simulations. The results show that a reduction of the longitudinal piezoresistive coefficient occurs due to the increased concentration of impurities in the films analyzed.

Key concepts: Piezoresistive effect, Materials science, Semiconductor, Amorphous solid, Impurity, Composite material, Optoelectronics, Physics

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