Design of meso-piezoresistive effects in micro pressure sensor
Tingdun Wen
Abstract
Tingdun Wen
Abstract
This paper used a piezoresistive effect-meso-piezoresistive effect-in a double-barrier resonant tunneling(DBRT) structure,took GaAs/AlAs/InGaAs DBRT film as core component,a pressure sensor with a film fixed around is designed.Grade of sensitivity are compared meso-piezoresistive with general,principle of meso-piezoresistive effects is verified,it can be inproved sensitivity of sensor to produced new micro-transducers based on meso-piezoresistive effect offers a new means.
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This paper used a piezoresistive effect-meso-piezoresistive effect-in a double-barrier resonant tunneling(DBRT) structure,took GaAs/AlAs/InGaAs DBRT film as core component,a pressure sensor with a film fixed around is designed.Grade of sensitivity are compared meso-piezoresistive with general,principle of meso-piezoresistive effects is verified,it can be inproved sensitivity of sensor to produced new micro-transducers based on meso-piezoresistive effect offers a new means.
Key concepts: Piezoresistive effect, Materials science, Sensitivity (control systems), Pressure sensor, Quantum tunnelling, Optoelectronics, Transducer, Electrical engineering