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A 4kb nMOS Static NVRAM With Extended 16kb Non-volatile Memory

V.M. Tjulkin, V.A. Miloshev

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Abstract

Increasing the density of a volatile static memory with a nonvolatile memory in a nonvolatile RAM (NVRAM) device is hindered by the complexity of the memory cell, which can contain from 8 to 12 transistors depending on the design. This limited static NVRAM chip capacity to about 4kb and access time to approximately 200ns until 1989, when Simtek Corp. announced 16kb and 64kb chips designed in a silicon nitride-silicon dioxide (SNOS) memory technology.

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What this paper is about

Increasing the density of a volatile static memory with a nonvolatile memory in a nonvolatile RAM (NVRAM) device is hindered by the complexity of the memory cell, which can contain from 8 to 12 transistors depending on the design. This limited static NVRAM chip capacity to about 4kb and access time to approximately 200ns until 1989, when Simtek Corp. announced 16kb and 64kb chips designed in a silicon nitride-silicon dioxide (SNOS) memory technology.

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Available abstract

Increasing the density of a volatile static memory with a nonvolatile memory in a nonvolatile RAM (NVRAM) device is hindered by the complexity of the memory cell, which can contain from 8 to 12 transistors depending on the design. This limited static NVRAM chip capacity to about 4kb and access time to approximately 200ns until 1989, when Simtek Corp. announced 16kb and 64kb chips designed in a silicon nitride-silicon dioxide (SNOS) memory technology.

Key concepts: Non-volatile random-access memory, Non-volatile memory, NMOS logic, Semiconductor memory, Computer science, Transistor, Materials science, Optoelectronics

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