1987•ACS symposium seriesRequires access
Patterning of Fine Via Holes in Polyimide by an Oxygen Reactive Ion Etching Method
Hiroshi Suzuki, Hiroyoshi Sekine, Shigeru Koibuchi, Hidetaka Sato, Daisuke Makino
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Abstract
A new silicon-containing positive photoresist having O 2 RIE (reactive ion etching) resistance was selected as an etching mask for the polyimide dry etch. The RIE selectivity of this resist to polyimide is more than five. By using this resist, 2 μm x 2 μm via holes are formed in 2 μm thick polyimide film. After the RIE treatment the resist width and thickness decreased, and the removal rates in horizontal and vertical direction are 5 and 10 nm/min., respectively. After the RIE treatment, a lawn-like scum was observed in a bottom of via hole. The amount of scum generated in silicon containing polyimide patterning is much more than in conventional polyimide patterning. However, the scum and the resist layer could be stripped by treatment with HF/NH 4 F solution and a successive phenolic type resist stripper.