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New Negative Deep-UV Resist for KrF Excimer Laser Lithography

Masayuki Endo, Yoshiyuki Tani, Masaru Sasago, Noboru Nomura

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Abstract

A photosensitive composition, consisting of an aromatic azide compound (4,4'-diazidodiphenyl methane) and a resin matrix (poly (styrene-co-maleic acid half ester)), has been developed and evaluated as a negative deep UV resist for high resolution KrF excimer laser lithography. Solubility of this resist in aqueous alkaline developer decreases upon exposure to KrF excimer laser irradiation. The alkaline developer removes the unexposed areas of this resist. No swelling-induced pattern deformation occurs and high aspect ratio sub-half-micron patterns in 1 micron film thickness are obtained with high sensitivity.

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What this paper is about

A photosensitive composition, consisting of an aromatic azide compound (4,4'-diazidodiphenyl methane) and a resin matrix (poly (styrene-co-maleic acid half ester)), has been developed and evaluated as a negative deep UV resist for high resolution KrF excimer laser lithography. Solubility of this resist in aqueous alkaline developer decreases upon exposure to KrF excimer laser irradiation. The alkaline developer removes the unexposed areas of this resist. No swelling-induced pattern deformation occurs and high aspect ratio sub-half-micron patterns in 1 micron film thickness are obtained with high sensitivity.

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Available abstract

A photosensitive composition, consisting of an aromatic azide compound (4,4'-diazidodiphenyl methane) and a resin matrix (poly (styrene-co-maleic acid half ester)), has been developed and evaluated as a negative deep UV resist for high resolution KrF excimer laser lithography. Solubility of this resist in aqueous alkaline developer decreases upon exposure to KrF excimer laser irradiation. The alkaline developer removes the unexposed areas of this resist. No swelling-induced pattern deformation occurs and high aspect ratio sub-half-micron patterns in 1 micron film thickness are obtained with high sensitivity.

Key concepts: Resist, Excimer laser, Materials science, Lithography, Photoresist, Irradiation, Excimer, Electron-beam lithography

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