1992•Conference on Lasers and Electro-OpticsRequires access
High-power 635-nm GaInP/GaAlInP laser diodes
Richard J. Fu, Shuai Wu, C. J. Hwang, S. S. Ou, J. J. J. Yang
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Abstract
High-power GaInP/GaAlInP visible laser diodes operating at 630-nm band wavelength are promising as a replacement of He-Ne lasers for various uses such as optical recording, bar code readers, and laser printers. However, high threshold current densities (Jth) and low differential quantum efficiencies (ηd) have limited this utilization. Recently, low Jth. values ot 1.2 kA/cm3 (637 nm) and 1.7 kA/cm2 (635 nm) laser diodes made with strained MQW laser diodes were reported, but the output powers were modest (150 mW at 637 nm and 610 mW at 635 nm).1,2. Since the threshold current of SQW laser diodes is lower than that of MQWs and the Jth of SQWs decreases as the cavity length increases, the SQW structure is a good candidate for lowering the Jth. Moreover, since the ηd·of QW structures is strongly dependent on the optical cavity length, by carefully selecting the cavity length and the facet reflectivity, the device performance can be improved.